Nanotechnologie at TU München

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What are the difficulties that come along with EUV?

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Proximity effect correction 


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What is nanofabrication?

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What are the issues with DUV?

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Four Key Parameters of Photoresists 


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Laser Direct Write

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Moore's Law

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What is required by the nanofabrication process?

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What are Excimer Lasers?

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Projection Lithography: What is the image resolution limited by?

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What new issues come up with wet imaging?

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Advantages and Disadvantages of using Ion Beams?

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Exemplary flashcards for Nanotechnologie at the TU München on StudySmarter:

Nanotechnologie

What are the difficulties that come along with EUV?

  • no conventional refractive optics due to strong absorption -> use of reflective optics
  • near-vacuum condition to reduce atmospheric absorption 

Nanotechnologie

Proximity effect correction 


  • under different exposure dose create same energy everywhere to correct the intershape and intrashape proximity effects 
  • smaller exposure dose for dense features and higher exposure dose for isolated features


  • most simple and effective way to reduce proximity effect is to increase beam energy and reduce resist thickness
  • Other problems with high beam energy: Inefficient use of energy, Need of high exposure dose (i.e. dwell time), Damage to substrate material or buried structures
  • very thin resists not resistant to RIE difficult to achieve fine size beam




Nanotechnologie

What is nanofabrication?

fabricated structures and parts in the dimension of below 100nm

Nanotechnologie

What are the issues with DUV?

  • optical lens material required is sensible to polarisation of light and can cause birefringence effects (blur)
  • finding transparent mask pellicles (material preventing contamination)
  • proper photoresists are difficult to find for DUV die to high absorption 

Nanotechnologie

Four Key Parameters of Photoresists 


Sensitivity 

  • chemically amplified with „photoacid generator"
  • catalytic reaction ideal for relatively low photon power illumination
  • PAG can be deactivated by airborne amines diffusion into resist „T-topping“

Contrast

  • high-contrast optical imaging does not necessarily produce high contrast resist profile but they can compensate each other

Line Edge Roughness (LER) 

  • Empirical trend: higher sensitivity of resist yields larger LER

Etch Resistance (ER)

Nanotechnologie

Laser Direct Write

  • single laser beam split into 32 individual beams paints pattern 
  • sequential and rather slow
  • excellent for mask writing

Nanotechnologie

Moore's Law

double the density of transistors on a unit area of Si chip every 1 1/2 years

Nanotechnologie

What is required by the nanofabrication process?

highly parallel

fast

reliable

Nanotechnologie

What are Excimer Lasers?

pulsed gas discharge in the deep UV range with high photon energy and short wavelength

Nanotechnologie

Projection Lithography: What is the image resolution limited by?

  • dependence on wavelength (gamma ~ spread)
  • dependence on slit (1/width ~ spread)
  • dependence on slit separation (distance ~ resolvability)

Nanotechnologie

What new issues come up with wet imaging?

maintain bubble-free liquid between lens and wafer by fast-moving stage

Nanotechnologie

Advantages and Disadvantages of using Ion Beams?

  • no backscattering, PSF narrow 
  • much lower proximity effect 
  • very high sensitivity in resist exposure


  • very shallow exposure depths  

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CompTIA Network+ N10-007

Physiologie

med. Terminologie

Anatomie

Allgemeine Pathologie und Hygiene

Arzneimittellehre

CAMPP II

ME (TUM_BWL) Kurzfragen

Info II

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